TLP350H(F) High-Speed 1.0A IGBT/MOSFET Gate Drive Optocoupler with 0.5µs Max Delay 50kV/µs CMR -40°C to 110°C Range 5V to 30V Supply SO6 Package and Under Voltage Lockout (UVLO) Protection

TLP350H(F) High-Speed 1.0A IGBT/MOSFET Gate Drive Optocoupler with 0.5µs Max Delay 50kV/µs CMR -40°C to 110°C Range 5V to 30V Supply SO6 Package and Under Voltage Lockout (UVLO) Protection

Features

Buffer logic type (totem pole output)

Output peak current: ±2.5 A (max)

Operating temperature: -40 to 125℃

Supply current: 3 mA (max)

Supply voltage: 15 to 30 V

Threshold input current: 5 mA (max)

Propagation delay time: 500 ns (max)

Common-mode transient immunity: ±20 kV/µs (min)

Isolation voltage: 3750 Vrms (min)

Applications

• Industrial Inverters

• Air Conditioner Inverters

• MOSFET Gate Drivers

• IGBT Gate Drivers

• Induction Cooktop and Home Appliances

Description

The TLP350H is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. It provides guaranteed performance and specifications at temperatures up to 125 .The TLP350H has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of ±20 kV/µs. It has a totem-pole output that can both sink and source current.

The TLP350H is ideal for IGBT of small capacity to middle capacity and power MOSFET gate drive.

INFORMATION

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